0

Nitrogen trifluoride

2025/8/1



The technical indicators of electronic grade nitrogen trifluoride (NF₃) need to be strictly classified according to application scenarios (such as semiconductor etching, cleaning, photovoltaics, etc.). The core indicators are as follows:


1. Basic purity level

grade

‌Purity requirements (volume fraction)‌

Applicable scenarios

Basic electronic grade

≥99.99%(4n)

Photovoltaic cells, LCD panel manufacturing, etc.

High-purity

≥99.996% (4n6)

Semiconductor process above 28nm

Super high-purity

≥99.999%(5N)

Advanced process (below 14nm), cold wall CVD chamber cleaning

Cutting-edge

≥99.9999%(6N)

3nm/5nm chip manufacturing, photoresist stripping

Note: About 92.8% of the electronic grade NF₃ in the world are concentrated in the 5N level, and the 6N level has a market share of less than 8% due to process difficulty.


2. Key impurity limit (taking level 5N as an example)

Impurity type‌

Limit requirements

‌The consequences of exceeding the standard‌

Oxygen + Argon (O₂+Ar)‌

≤0.5ppm (5N level requirements ≤1ppm)

Abnormal oxide film on the wafer surface, threshold voltage drift

Moisture (H₂O)‌

≤0.5ppm (dew point ≤-76℃)

Accelerate cavity corrosion and reduce etch selectivity

Hydrogen fluoride (HF)‌

≤0.1ppm

Corrode the vacuum pump oil, damage the silicon lattice structure

Carbon monoxide (CO)‌

≤0.5ppm

Reduce film deposition uniformity

Total metal ions

≤1ppb (Na/Fe/K, etc.)

Induces circuit short circuit and device leakage

Particulate matter (≥0.1μm)‌

≤0.1 units/mL

Causes chip surface defects

Hydrolyzable fluoride

≤0.03mg/l

Polluting wafer surface

Special control items:

Phosphine (PH₃) and hydrogen arsenide (AsH₃) need ≤0.05 ppb (grade 6N)

Greenhouse gas potential (GWP) ≤17,000 (refer to IPCC standard)


3. Packaging and storage and transportation standards

Container requirements

Nickel-based alloy/chromium-molybdenum alloy cylinder, electrolytic polishing and passivation treatment of inner wall.

The valve is made of copper alloy and is equipped with a double blocking and leakage prevention device.

Filling standards

Filling pressure ≤1.5 MPa, three-stage pressure stable filling method is adopted

Filling coefficient ≤0.76 kg/L (trifluoromethane analogy requirements)

Storage and transportation conditions

Store in an environment with a humidity of 45–65% from light.

Pressure fluctuations need to be monitored during the transportation process (bumping frequency ≤2.5 times/second).

Leak alarm threshold is 0.5%, explosion limit is 2.3–82%.


4. Testing methods and standard basis

Testing items‌

method

Standard basis

Purity and impurity gas

Helium ionization gas chromatography (detection limit 10⁻⁶)

GB/T28726

moisture

Optical cavity inactivity spectroscopy (accuracy ±0.01ppm)

GB/T5832.3

Metal ions

ICP-MS (detection limit 0.1ppb)

SEMI C10/SUT 15587

Particulate matter‌

Laser particle counter (0.1–10μm)

ISO 21501

Hydrolyzable fluoride

Ion chromatography (detection limit 0.03mg/L)

GB/T 31995

Implementation standards:

Purity and safety: GB/T 21287-2021 (replace 2007 version)

Transportation safety: TSG R0006 "Technical Supervision Regulations for Gas Bottle Safety"


5. Application risk correlation

Semiconductor etching:

HF >0.1 ppm will corrode the vacuum system, and O₂ >1 ppm will cause wafer threshold voltage drift.

Cavity cleaning:

Moisture >0.5 ppm reduces the cold wall cleaning efficiency, and metal residue >1 ppb causes device failure.

Photovoltaic manufacturing:

Particulate matter exceeds the standard and causes microcracks on the surface of solar cells, and the photoelectric conversion rate decreases by ≥15%.

A wafer factory suffered a scrapped entire batch of chips due to an oxygen content exceeding the standard (5 ppm), with losses of more than 10 million US dollars.



Next

Tungsten hexafluoride

Previous

Hydrogen bromide